3 edition of **Properties of III-V quantum wells and superlattices** found in the catalog.

Properties of III-V quantum wells and superlattices

- 136 Want to read
- 28 Currently reading

Published
**1996**
by INSPEC in Stevenage
.

Written in English

- Quantum wells.,
- Superlattices as materials.

**Edition Notes**

Includes index.

Statement | edited by Pallab Bhattacharya. |

Series | EMIS datareviews series -- no. 15 |

Contributions | Bhattacharya, P. K., INSPEC (Information service) |

Classifications | |
---|---|

LC Classifications | QC176.8.Q35 P76 1996 |

The Physical Object | |

Pagination | xvii, 400 p. : |

Number of Pages | 400 |

ID Numbers | |

Open Library | OL20781821M |

ISBN 10 | 0852968817 |

This book is specifically concerned with the basic electronic and optical properties of two dimensional semiconductor heterostructures based on III-V and II-Vi compounds. It explores various consequences of one-dimensional size-quantization, a genuine quantum-mechanical effect, on the most basic physical properties of :// Quantum Wells, Wires and Dotsprovides all the essential information, both theoretical and computational, to develop an understanding of the electronic, optical and transport properties of these semiconductor nanostructures. The book will lead the reader through comprehensive explanations and mathematical derivations to the point where they can design semiconductor nanostructures with the +Wells,+Wires+and+Dots:+Theoretical+and.

Semiconductor Superlattices and Interfaces is concerned with the dynamic field of semiconductor microstructures and interfaces. Several topics in the fundamental properties of interfaces, superlattices and quantum wells are included, as are papers on growth techniques and :// -Electrical Transport Studies of InGaAs/GaAs Strained-Layer Quantum-Well Structures -Device Structures Based on GaAsP/InGaAs Strained Layer Superlattices and Their Stability -The Preparation and Infrared Properties of In (AsSb) Strained-Layer Superlattices -Ion Implantation of III-V Compound Semiconductor Strained-Layer Semiconductors Systems

complex structures, for example, multiple quantum wells and superlattices. The results for n(u) and ct(oj) of bulk III-V compounds compare well with other one-electron band structure mode] and our calculations show that for small frequencies, the index of refraction is determined mai by the contributions of the outer regions of the Brillouin :// The potential V(z) is associated with the electric ﬂeld V(z) = eEz and because of the negative charge on the electron, a potential well is formed containing bound states described by quantized levels. A similar situation occurs in the two{dimensional behavior for the case of electrons in quantum wells produced by molecular beam

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The chapter begins with a review of the fundamental principles of bandgap engineering and quantum confinement. It then describes the optical and electronic properties of semiconductor quantum wells and superlattices at a tutorial level, before describing the principal optoelectronic :// Get this from a library.

Properties of III-V quantum wells and superlattices. [Pallab Bhattacharya; INSPEC (Information service);] -- This volume describes the results of current research on the characterization and precisely-controlled building of atomic-scale multilayers of Get this from a library.

Properties of III-V quantum wells and superlattices. [Pallab Bhattacharya; INSPEC (Information service);] -- Annotation A finely-structured, state-of-the-art review on controlled building of atomic-scale mutilayers, where nanometric structures based on III-V This chapter describes the electronic and optical properties of III–V nitride-based quantum wells and superlattices.

Wide bandgap III–V nitrides—such as GaN, AlN, InN—and their alloys exhibit considerable hardness, high thermal conductivity, large bandgap energies, and both conduction and valence band offsets for carrier :// Properties of III-V quantum wells and superlattices edited by Pallab Bhattacharya （EMIS datareviews series, No.

15） INSPEC, 「Properties of III-V quantum wells and superlattices」を図書館から検索。カーリルは複数の図書館からまとめて蔵書検索ができるサービスです。 カーリルは全国の図書館から本を検索できるサービスです Fig A quantum well, wire, and dot.

(a) Schematic diagram of an AlAs/GaAs quantum well. The electrons are confined along z (showing the three lowest energy confined eigenstates) and free to move in the x-y plane. (b) A quantum wire is formed at the intersection of the T-shaped (shaded) region formed by two 10 nm GaAs type I quantum wells, confined by Al x Ga 1 − x As :// This book helps you understand the basic properties of semiconductor quantum wells and superlattices and describes how they can be utilized for long-wavelength infrared detectors and imaging arrays.

Includes illustrations and :// Band structures of III-V quantum wells and superlattices Yia-Chimg Chang 35 Transport properties of III-V semiconductor quantum wells and superlattices Yia-Chung Chang 42 Miniband parameters in superlattices B.R.

Nag 49 Excitons in quantum wells K.K. Bajaj 55 Effects of electric fields in quantum wells and superlattices J.P This book contains the lectures delivered at the NATO Advanced Study Institute on "Physics and Applications of Quantum Wells and Superlattices", held in Erice, Italy, on April May 1, This course was the fourth one of the International School of Solid-State Device Research, which is under the auspices of the Ettore Majorana Center for Optical Physics of Quantum Wells David A.

Miller Rm. 4B, AT&T Bell Laboratories Holmdel, NJ USA 1 Introduction Quantum wells are thin layered semiconductor structures in which we can observe and control many quantum mechanical effects.

They derive most of their special properties from the~dabm/pdf. A tutorial review is given of the transport, the electronic and optical properties and the applications of quantum wells and superlattices which can be formed from III-V narrow gap struclures This series focuses on electro-optical applications of advance semiconductors such as quantum wells and superlattices.

Volume 1 is dedicated to the long wavelength infrared detectors based on III-V Semiconductor quantum wells and superlattices as a new generation for infrared detectors based on artifically synthesized quantum › Books › Engineering & Transportation › Engineering. Frequency and density dependent radiative recombination processes in III–V semiconductor quantum wells and superlattices Roberto Cingolani Max-Planck-Institut für Festkörperforschung, D, Stuttg Germany & Klaus Ploog Max-Planck-Institut für Festkörperforschung, Author of Semiconductor Optoelectronic Devices, Properties of lattice-matched and strained indium gallium arsenide, Properties of Iii-V Quantum Wells and Superlattices (E M I S Datareviews Series), Semiconductor optoelectronic devices, Photonics technology in the 21st century, Optoelectronic materials and devices II, Quantum Dots, Nanoparticles, and Nanoclusters, Quantum dots, nanoparticles Quantum Well Energy Levels.

Triangular Quantum Well Energy Levels. Two-Dimensional Density of States. Excitons and Shallow Impurities in Quantum Wells. Tunneling Structures, Coupled Quantum Wells, and Superlattices. Modulation Doping of Heterostructures.

n-i-p-i Structures. Optical Properties of Thin Heterostructures. Optical Matrix › eBay › Books › Nonfiction. Quantum Wel Quantum Wells, Superlattices, l and Band-Gap Engineering This chapter reviews the principles of band-gap engineering and quantum conﬁnement in semiconductors, with a particular emphasis on their optoelectronic properties.

The chapter begins with a review of the fundamental principles of band-gap engineering and quantum The effects of tensile strain on the energy-band structures of semiconductor quantum wells and superlattices (SL's) are studied theoretically, with emphasis on structures with unique valence-subband configurations achievable only through the use of tensile strain.

Quantum wells are treated using finite-element envelope-function calculations which fully treat interactions between the light-hole This series focuses on electro-optical applications of advance semiconductors such as quantum wells and superlattices.

Volume 1 is dedicated to the long wavelength infrared detectors based on III-V Semiconductor quantum wells and superlattices as a new generation for infrared detectors based on artificially synthesized quantum Semiconductor quantum structures are at the core of many photonic devices such as lasers, photodetectors, solar cells etc.

To appreciate why they are such a good fit to these devices, we must understand the basic features of their band structure and how they interact with incident ://. Mendez, E. E. & Agulló-Rueda, F. Optical properties of quantum wells and superlattices under electric fields.

Journal of Luminesce – (). We have studied the structural and optical properties of GaAs/AlGaAs multiple quantum well structures (MQW’s) grown on Si for a range of different types of buffer layer with special reference to the effects of strained layer superlattices and thermal annealing on material quality.

Layers were analyzed by in situ reflection high‐energy electron diffraction and ex situ transmission electron Interfacial interdiffusion in quantum wells and superlattices could alter the interfacial strain, band alignment, and even the atomic symmetry at the interface, thus potentially changing the electronic and optical ://